ao2o22 standard cell family
2×2-OR into 2-AND gate
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2-2 I/P OR-AND gate with a stage effort of about 3.5 for the ao2o22_x2, and about 7 for the ao2o22_x4.
q:((i2+i3)*(i0+i1))
cell width
power
Generic 0.13um typical timing (ps & ps/fF), pin
i1
.
leakage
dynamic
tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF)
ssxlib013
gates
lambda
0.13um
nW
nW/MHz
PinCap
PropR
RampR
PropF
RampF
ao2o22_x2
3.0
90
4.95
1.39
30.8
4.0f
108
1.53
151
1.25
ao2o22_x4
3.3
100
5.50
2.08
47.6
3.8f
135
0.77
196
0.64
ao2o22_x2
Effort
FO4
Log.
i0
/\
¯_
2.29
i1
/\
¯_
2.17
i2
/\
¯_
2.44
i3
/\
¯_
2.61
ao2o22_x4
Effort
FO4
Log.
i0
/\
¯_
2.66
i1
/\
¯_
2.52
i2
/\
¯_
2.79
i3
/\
¯_
2.96
Web data book for the ssxlib. V
dd
=1.2V, T=27°C, nominal process, generic 0.13um technology. Copyright © 2005-2007 Graham Petley. 16 JUL 2007